姓名：石建军

主要研究方向和从事工作：2020年11月进入长治学院物理系工作。主要从事《模拟电子技术》、《传感器》、《微电子导论》、《半导体器件物理》等相关课程的教学工作。主要研究方向为宽带隙半导体材料的制备与特性研究（β-Ga₂O₃、BN、CuGaO₂、CuGa₂O₄）、β-Ga₂O₃基半导体异质结紫外探测器和电力电子器件。

主要代表性成果：

第一和通讯作者公开发表论文9篇，包括国际著名学术期刊Applied Surface Science、Ceramics International、Journal of Materials Science等。

[1] Shi Jian-Jun，Liang Hong-Wei，Xia Xiao-Chuan，Abbas Qasim. Band alignment analysis of CuGaO₂/β-Ga₂O₃ heterojunction and application to deep-UV photodetector. Applied Surface Science, 2021, 569, 151010.

[2] Jian-Jun Shi，Hong-Wei Liang，Xiao-Chuan Xia. Oxygen partial pressure controlling epitaxy of CuGaO₂ and CuGa₂O₄ films on β-Ga₂O₃ substrate by reactive deposition epitaxy. Ceramics International, 2022, 48, 4867-4873.

[3] Shi Jian-Jun，Liang Hong-Wei，Xia Xiao-Chuan，Liu Jun, Abbas Qasim. Rectification behavior of type-ⅡCuGa₂O₄/β-Ga₂O₃ heterojunction diode. Applied Surface Science, 2023, 618, 156604.

[4] Shi Jian-Jun，Liang Hong-Wei，Xia Xiao-Chuan，Li Zhuo, Long Ze, Zhang Heqiu, Liu Yang. Preparation of high-quality CuGa₂O₄ film via annealing process of Cu/β-Ga₂O₃. Journal of Materials Science, 2019, 54, 11111-11116.

[5] Chen Yuanpeng, Liang Hongwei, Abbas Qasim, Liu Jun, Shi Jianjun, Xia Xiaochuan, Zhang Heqiu, Du Guotong. Growth and characterization of porous sp2-BN films with hollow spheres under hydrogen etching effect via borazane thermal CVD, 2018, 452, 314-321.